Silicon Carbide Coating、MOCVD Susceptor;Silicon carbide coating;SiC coating substrate;SiC coating Wafer、SiC carrier - Manufacturers, Suppliers, Factory from China
Silicon Carbide Coating、MOCVD Susceptor;Silicon carbide coating;SiC coating substrate;SiC coating Wafer、SiC carrier, , , ,. The product will supply to all over the world, such as Europe, America, Australia,, ,, .
The growth process of monocrystalline silicon is completely carried out in the thermal field. A good thermal field is conducive to improving the quality of crystals and has a higher crystallization...
The PVT method, whose full name is Physical Vapor Transportation, is a common method for growing silicon carbide (SiC)crystals under high temperature and high pressure. Its basic principle is to he...
Due to the rapid development of the lithium battery market in recent years, the investment and expansion projects of anode materials enterprises have increased. Since 2019, the new production capac...
Graphite paper classification
Graphite paper passes through a series of addition processes such as high carbon phosphorus sheet graphite, chemical treatment, high temperature expansion rolling and...
During the vapor phase epitaxy (VPE) process, the role of the pedestal is to support the substrate and ensure uniform heating during the growth process. Different types of pedestals are suitable fo...
The behavior of Mohr stripes and flat belts in the science of science and quantum physics called “Magic Angle” twisted bilayer graphene (TBLG) has attracted great interest from scientis...