SiC Coated Graphite Half Moon Part and Assembly For SiC Epitaxy

SiC Coated Graphite Halfmoon Part is a key component used in semiconductor manufacturing processes, especially for SiC epitaxial equipment. Its structural design and material properties directly determine the quality and production efficiency of epitaxial wafers.

Reaction chamber construction:
The half moon part is composed of two parts, the upper and bottom parts, which are buckled together to form a closed growth chamber, which accommodates the silicon carbide substrate (usually 4H-SiC or 6H-SiC) and achieves epitaxial layer growth by precisely controlling the gas flow field (such as a mixture of SiH₄, C₃H₈, and H₂).
Temperature field regulation:
The high-purity graphite base combined with the induction heating coil can maintain the chamber temperature uniformity (within ±5°C) at a high temperature of 1500-1700°C to ensure the consistency of epitaxial layer thickness.
Airflow guidance:
By designing the position of the air inlet and outlet (such as the side air inlet and top air outlet of the horizontal furnace body), the reaction gas laminar flow is guided through the substrate surface to reduce growth defects caused by turbulence.

Base material: high-purity graphite
Purity requirements: carbon content ≥99.99%, ash content ≤5ppm, to ensure that no impurities are precipitated to contaminate the epitaxial layer at high temperatures.
Performance advantages:
High thermal conductivity: The thermal conductivity at room temperature reaches 150W/(m・K), which is close to the level of copper and can quickly transfer heat.
Low expansion coefficient: 5×10^-6/℃ (25-1000℃), matching the silicon carbide substrate (4.2×10^-6/℃), reducing the cracking of the coating caused by thermal stress.
Processing accuracy: A dimensional tolerance of ±0.05mm is achieved through CNC machining to ensure the sealing of the chamber.

Differentiated applications of CVD SiC and CVD TaC